NCE新洁能场效应MOS管 NCE7578 TO-220F 电流78A 电压75V

The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

NCE新洁能MOS管 NCE7075 70V 75A场效应管

The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能半导体NCE6890 TO-220 场效应MOS管

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能代理商供应MOS管 NCE4060k场效应管

The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

新洁能NCE代理提供MOS管 NCE0213场效应管

The NCE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能NCE提供MOS管 NCE0117场效应管

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE90R1K2K新洁能代理商提供

The series of devices use advanced super junction echnology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits t...

MOS管 NCE60P50

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...

MOS管 NCE65R540

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...

MOS管 NCE01P13

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

POWER MOSFET--10N60K

The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...

POWER MOSFET--2N60

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res...

POWER MOSFET--1N60

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance...

IGBT晶体管--SGT20T120NPTFDP7

SGT20N120NPTFDP7绝缘栅双极型晶体管采用新一代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于感应加热UPS，SMPS以及PFC等领域。

电磁炉上IGBT--SGT15T120LR1P7

SGT15T120LR1P7绝缘栅双极型晶体管采用新一代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于感应加热UPS，SMPS以及PFC等领域。

MOSFET场效应晶体管-SVF12N60

SVF12N60T/F/SN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。

MOSFET场效应晶体管-SVF10N60

SVF10N60T/F/FG/S/KN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。

MOSFET场效应晶体管-SVF8N60

SVF8N60T/FN沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM 马达驱动。

MOSFET场效应晶体管-SVF7N60

SVF7N60T/F/S/K/MJ N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。

MOSFET场效应晶体管-SVF4N60

SVF4N60D/F/FG/T/K/M/MJN沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM...