47A，600V DP MOS功率管--SVS47N60PN

SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，650V DP MOS功率管--SVS11N65T/F

SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，600V DP MOS功率管--SVS11N60T/F

SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。使得功率转换器高功率密度，提高热行为。

新洁能增强型N沟道 NCE8580 MOS管

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

代理新洁能NCE8290 TO-220F N沟道MOSFET场效应管

The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE新洁能场效应MOS管 NCE7578 TO-220F 电流78A 电压75V

The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

NCE新洁能MOS管 NCE7075 70V 75A场效应管

The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能半导体NCE6890 TO-220 场效应MOS管

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能代理商供应MOS管 NCE4060k场效应管

The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

新洁能NCE代理提供MOS管 NCE0213场效应管

The NCE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能NCE提供MOS管 NCE0117场效应管

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE90R1K2K新洁能代理商提供

The series of devices use advanced super junction echnology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits t...

MOS管 NCE60P50

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...

MOS管 NCE65R540

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...

MOS管 NCE01P13

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

POWER MOSFET--10N60K

The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...

POWER MOSFET--2N60

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res...

POWER MOSFET--1N60

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance...

IGBT晶体管--SGT20T120NPTFDP7

SGT20N120NPTFDP7绝缘栅双极型晶体管采用新一代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于感应加热UPS，SMPS以及PFC等领域。

电磁炉上IGBT--SGT15T120LR1P7

SGT15T120LR1P7绝缘栅双极型晶体管采用新一代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于感应加热UPS，SMPS以及PFC等领域。