具有保护功能的门极驱动芯片--PN7003

PN7003是一款可以提供大电流输出、方便易用的智能化IGBT驱动，该芯片集成了欠压锁定、过压锁定、IGBT导通时间 控制、IGBT SOA保护以及故障后“软关断”等功能，保障IGBT安全工作。并且PN7003可与MCU进行故障通信，将故障信号反 馈给MCU，同时接收MCU唤醒或重置信号。

三相半桥驱动芯片-PN7136

PN7136是一款具有三相独立输出的高压、高速功率MOSFET和IGBT高低侧驱动芯片，其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT结构。该芯片逻辑输入电平兼容低至3.3V的CMOS或LSTTL逻辑输出电平。该芯片可以通过外部电流感应电阻传送信号对六个输出进行关断，实现过流...

基于P衬底、P外延的高压、高速功率MOSFET和IGBT驱动芯片--PN7103

PN7103 是一款基于 P衬底、P外延的高压、高速功率 MOSFET和 IGBT驱动芯片。其浮地通道能工作在600V的高压下，可用于驱动 2个N型功率 MOSFET或 IGBT组成的半桥结构。该芯片逻辑输入电平兼容低至 3.3V的CMOS或 LSTTL逻辑输出电平。输出具有大电流脉冲能力。传输延时具...

3段高压驱动电源芯片--PN7336

The PN7336 is a high voltage, high speed power MOSFET and IGBT drivers with a three independent high and low sidereferenced output channels for 3-...

具有超低功耗睡眠模式的两通道马达驱动芯片--PN7705

PN7705是一款具有超低功耗睡眠模式的两通道直流马达驱动芯片，其可以控制马达进入正转、反转、刹车和超低功耗睡眠模式。该芯片集成了欠压保护、过温保护、输出短路保护和外部可调节驱动限流等功能，并且可以将错误状态反馈给MCU，保障马达安全工作。该芯片的两个输入管脚IN1和IN2兼容5V和3.3V信号控制，具有良好...

网格状高压力高功率MOSFET--PN7308

The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

网格状高功率MOSFET--PN7303

The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

三相桥式驱动器--PN7136

The PN7136 is a high voltage, high speed power MOSFET and IGBT drivers with a three independent high and low side referenced output channels for 3-phase ap...

高压力,高功率MOSFET--PN7106A/B

The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two...

高、低驱动程序高功率MOSFET--PN7113

The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI pr...

高电压,高功率驱动MOSFET--PN7104

The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

网格状电机驱动芯片--PN7103

The PN7103 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

高、低驱动程序电机驱动芯片--PN7101

The PN7101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

高压供电驱动芯片--PN7008A/B

The PN7008 is a high voltage, high speed power MOSFET and IGBT driver. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT ...

120V高、低驱动程序电机驱动芯片--PN7006A/B

The PN7006 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

半桥驱动芯片-PN7103

PN7103是一款基于P衬底、P外延的高压、高速功率MOSFET和IGBT驱动芯片，其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT组成半桥结构，该芯片逻辑输入电平兼容低至3.3V的CMOS或LSTTL逻辑输出电平。输出具有大电流脉冲能力，传输延时具有匹配性，以简化在高频下的应...