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MOS管 NCE01P13

产品分类: mos管
    The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested
    订购热线:18929103949
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

       

      NCE N-Channel Enhancement Mode Power MOSFET

       

      ModleNCE01P13

       

       

       

      一、Description

       

      The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested

       

      二、General Features 

       

      l  VDS = 100V,ID= -13A

       RDS(ON)< 200m @ VGS =10V  (Typ:170m)

      l  Super high dense cell design 

      l  Advanced trench process technology 

      l  Reliable and rugged 

      l  High density celldesign for ultra low on-resistance

       

      三、Application

      l  Power switch

      l  DC/DC converters

       

      四、Package Marking And Ordering Information

       

       NCE01P13 封装和订购信息

       

      五、Absolute Maximum Ratings (T =25unless otherwise noted)

       

       NCE01P13 最大参数

       

       

            

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        邮箱:dgzm699@163.com      

       

        总部地址:东莞市大岭山镇矮岭冚村沿河东街8号

        佛山办事处:佛山市顺德区容桂镇细滘德宝北路合安街19号

       

        中铭官网:www.zm699.com      

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      验证码: 验证码
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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