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POWER MOSFET--1N60

产品分类: 功率器件
    The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
    订购热线:18929103949
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

      POWER MOSFET

       

      MODEL:1N60

       

      一、DESCRIPTION

       

      The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

       

      二、FEATURES

       

      * R DS(ON) <11.5 @VGS= 10V.

      * Ultra Low gate charge (typical 5.0nC)

      * Low reverse transfer capacitance (CRSS = typical 3.0 pF)

      * Fast switching capability

      * Avalanche energy specified

      * Improved dv/dt capability, high ruggedness

       

      三、SYMBOL/PACKAGE

       

      UTC MOS管 1N60封装图

       

      四、ORDERING INFORMATION

       

      UTC MOS管 1N60订购信息

       

       

      五、MARKING

       

      UTC MOS管 1N60命名规则

       

      六、ABSOLUTE MAXIMUM RATINGS

       

      UTC MOS管 1N60极限参数

           

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      验证码: 验证码
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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