POWER MOSFET--1N60
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
POWER MOSFET
MODEL：1N60
一、DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
二、FEATURES
* R DS(ON) <11.5
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
三、SYMBOL/PACKAGE
四、ORDERING INFORMATION
五、MARKING
六、ABSOLUTE MAXIMUM RATINGS
.jpg){kind=small}
全国咨询热线：18929103949 唐小姐
销售部电话：0769-81150556
工程部电话：0769-85638990
QQ：1923681612
邮箱：dgzm699@163.com
总部地址：东莞市大岭山镇矮岭冚村沿河东街8号
佛山办事处：佛山市顺德区容桂镇细滘德宝北路合安街19号
中铭官网：www.zm699.com
| * 联系人： | 请填写您的真实姓名 |
| * 手机号码： | 请填写您的联系电话 |
| 电子邮件： | |
| * 采购意向描述： | |
| 请填写采购的产品数量和产品描述，方便我们进行统一备货。 | |
| 验证码： |
|
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
相关资讯
| 我要评论: | |
| 内 容： |
（内容最多500个汉字，1000个字符） |
| 验证码： | 看不清？！ |
销售电话：0769-81150556
工程电话：0769-85638990
传真：0769-83351643
地址：东莞市矮岭冚村沿河东街8号
共有-条评论【我要评论】