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中铭电子解决方案
N通道高级功率mosfet--RU207C
N通道高级功率mosfet--RU207C
* 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free...
N通道超级沟槽ii功率mosfet--NCEP058N85D
N通道超级沟槽ii功率mosfet--NCEP058N85D
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...
增强型功率mosN沟道--NCE4080K
增强型功率mosN沟道--NCE4080K
The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
N沟道增强型功率mosfet--NCE3010S
N沟道增强型功率mosfet--NCE3010S
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
龙腾12A,N渠道650V超级MOS管--LND12N65
龙腾12A,N渠道650V超级MOS管--LND12N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
龙腾10A,N渠道650V超级MOS管--LND10N65
龙腾10A,N渠道650V超级MOS管--LND10N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,4A超级MOS管--LND4N65
龙腾N渠道650V,4A超级MOS管--LND4N65
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,16A超级MOS管--LND16N65
龙腾N渠道650V,16A超级MOS管--LND16N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
龙腾N渠道650V,7A超级MOS管--LND7N65D
龙腾N渠道650V,7A超级MOS管--LND7N65D
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
MOS管--NCE3407A
MOS管--NCE3407A
Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...
新洁能MOS管--NCE3407
新洁能MOS管--NCE3407
MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).
10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S
10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S
SVF10N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。
7A、650V N沟道增强型场效应管--SVF7N65T/F/K/S
7A、650V N沟道增强型场效应管--SVF7N65T/F/K/S
SVF4N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。
5A、600V N沟道增强型场效应管--SVF5N60T/F/D/MJ/K
5A、600V N沟道增强型场效应管--SVF5N60T/F/D/MJ/K
SVF5N60T/F/D/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。
4A、650V N沟道增强型场效应管--SVF4N65T/F/M/MJ/D/K
4A、650V N沟道增强型场效应管--SVF4N65T/F/M/MJ/D/K
SVF4N65T/F/M/MJ/D/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。
3A、800V N沟道增强型场效应管--SVF3N80M/MJ/F/D
3A、800V N沟道增强型场效应管--SVF3N80M/MJ/F/D
SVF3N80M/MJ/F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。
12A、650V N沟道增强型场效应管--SVF12N65T/F/K/S
12A、650V N沟道增强型场效应管--SVF12N65T/F/K/S
SVF12N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。
7A、800V N沟道增强型场效应管--SVF7N80T/F
7A、800V N沟道增强型场效应管--SVF7N80T/F
SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。
2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D
2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D
SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。
记录总数:43 | 页数:3123  
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