N通道超级沟槽ii功率mosfet--NCEP058N85D

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...

增强型功率mosN沟道--NCE4080K

The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

N沟道增强型功率mosfet--NCE3010S

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

龙腾12A,N渠道650V超级MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾10A,N渠道650V超级MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,4A超级MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,16A超级MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾N渠道650V,7A超级MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

新洁能MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S

SVF10N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

7A、650V N沟道增强型场效应管--SVF7N65T/F/K/S

SVF4N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

5A、600V N沟道增强型场效应管--SVF5N60T/F/D/MJ/K

SVF5N60T/F/D/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

4A、650V N沟道增强型场效应管--SVF4N65T/F/M/MJ/D/K

SVF4N65T/F/M/MJ/D/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

3A、800V N沟道增强型场效应管--SVF3N80M/MJ/F/D

SVF3N80M/MJ/F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

12A、650V N沟道增强型场效应管--SVF12N65T/F/K/S

SVF12N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

7A、800V N沟道增强型场效应管--SVF7N80T/F

SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。

1A、600V N沟道增强型场效应管--SVF1N60AM/MJ/B/D/F/H

SVF1N60AM/MJ/B/D/F/H N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压 VDMOS 工艺技术制造。