新洁能场效应管NCE65NF036T-TO-247封装MOS管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid reco...

新洁能场效应管NCE65NF023T-TO-220F封装MOS管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新洁能场效应管NCE65NF068T-TO-247封装MOS管

新洁能场效应管NCE65NF099F-MOS管TO-220F封装

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新洁能MOS管NCE65NF130F场效应管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新洁能场效应管NCE65N180F-TO-220F封装MOS管

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

新洁能场效应管650V-MOS管NCE65TF130F

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junctio...

MOS管 650V N沟道TO-220F MOSFET场效应管-NCE65T180F

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

N通道超级沟槽ii功率mosfet--NCEP058N85D

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...

增强型功率mosN沟道--NCE4080K

The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

N沟道增强型功率mosfet--NCE3010S

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

龙腾12A,N渠道650V超级MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾10A,N渠道650V超级MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,4A超级MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,16A超级MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾N渠道650V,7A超级MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

新洁能MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S

SVF10N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。