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POWER MOSFET--10N60K

产品分类: mos管
    The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
    订购热线:18929103949
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

       

      POWER MOSFET

       

      MODEL: 10N60K

       

       

      一、DESCRIPTION

       

      The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide  customers a minimum on-state resistance and superior switching performance, etc.

      The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.

       

      二、FEATURES

       

      * RDS(ON) < 1.2 @ VGS =10V

      * Low Gate Charge (Typical 90nC)

      * Low CRSS ( typical 18 pF)

      * High Switching Speed

      * Improved dv/dt capability

       

      三、SYMBOL/PACKAGE

       

      UTC MOS管 10N60K封装图 

       

      四、ORDERING INFORMATION

       

       UTC MOS管 10N60K订购信息

       

      五、MARKING

       

       UTC MOS管 10N60K命名规则

       

      六、ABSOLUTE MAXIMUM RATINGS

       

       UTC MOS管 10N60K极限参数

        

       

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      验证码: 验证码
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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