POWER MOSFET--10N60K
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
POWER MOSFET
MODEL: 10N60K
一、DESCRIPTION
The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
二、FEATURES
* RDS(ON) < 1.2
* Low Gate Charge (Typical 90nC)
* Low CRSS ( typical 18 pF)
* High Switching Speed
* Improved dv/dt capability
三、SYMBOL/PACKAGE
四、ORDERING INFORMATION
五、MARKING
六、ABSOLUTE MAXIMUM RATINGS
.jpg){kind=small}
全国咨询热线：400-788-7770
销售部电话：0769-81150556
工程部电话：0769-85638990 手机：18923224605 叶小姐
邮箱：dgzm699@163.com QQ：1923681612 传真：0769-83351643
总部地址：东莞市大岭山镇矮岭冚村沿河东街8号
佛山办事处：佛山市顺德区容桂镇细滘德宝北路合安街19号
中铭官网：www.zm699.com
| * 联系人： | 请填写您的真实姓名 |
| * 手机号码： | 请填写您的联系电话 |
| 电子邮件： | |
| * 采购意向描述： | |
| 请填写采购的产品数量和产品描述，方便我们进行统一备货。 | |
| 验证码： |
|
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
相关资讯
| 我要评论: | |
| 内 容： |
（内容最多500个汉字，1000个字符） |
| 验证码： | 看不清？！ |
销售电话：0769-81150556
工程电话：0769-85638990
传真：0769-83351643
地址：东莞市矮岭冚村沿河东街8号
共有-条评论【我要评论】