POWER MOSFET--10N60K
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
POWER MOSFET
MODEL: 10N60K
一、DESCRIPTION
The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
二、FEATURES
* RDS(ON) < 1.2
* Low Gate Charge (Typical 90nC)
* Low CRSS ( typical 18 pF)
* High Switching Speed
* Improved dv/dt capability
三、SYMBOL/PACKAGE
四、ORDERING INFORMATION
五、MARKING
六、ABSOLUTE MAXIMUM RATINGS
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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