5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K

SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器，高压H桥PWM...

龙腾12A,N渠道650V超级MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾10A,N渠道650V超级MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,4A超级MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,16A超级MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾N渠道650V,7A超级MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

650V MOS管--NCE65R900I,NCE65R900K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

MOS管650V--NCE65R1K2Z

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R1K2,NCE65R1K2D,NCE65R1K2F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R1K2I,NCE65R1K2K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R2K4I,NCE65R2K4K

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

NCE65R540I, NCE65R540K

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

新洁能MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

10A肖特基势垒二极管--S1062AE

45V 15A肖特基二极管芯片

GDM229045MA是采用硅外延工艺制造的肖特基二极管芯片，损耗功率小，效率高，高ESD能力，高抗浪涌电流能力，具有瞬态反应保护能力的保护环结构，广泛应用于太阳能电池保护电路等各类电子线路中。

20A、100V肖特基整流管--SBD20C100T/F

SBD20C100T/F是采用硅外延工艺制作而成的肖特基整流二极管，广泛应用于开关电源、保护电路等各类电子线路中。

10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S

SVF10N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。