5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K

SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器，高压H桥PWM马达驱动。

新洁能场效应管NCE65NF036T-TO-247封装MOS管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid reco...

新洁能场效应管NCE65NF023T-TO-220F封装MOS管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新洁能场效应管NCE65NF068T-TO-247封装MOS管

新洁能场效应管NCE65NF099F-MOS管TO-220F封装

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新洁能MOS管NCE65NF130F场效应管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新洁能场效应管NCE65N180F-TO-220F封装MOS管

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

新洁能场效应管650V-MOS管NCE65TF099D,NCE65TF099,NCE65TF099F

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

新洁能场效应管650V-MOS管NCE65TF130F

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junctio...

MOS管 650V N沟道TO-220F MOSFET场效应管-NCE65T180F

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

N通道超级沟槽ii功率mosfet--NCEP058N85D

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...

增强型功率mosN沟道--NCE4080K

The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

N沟道增强型功率mosfet--NCE3010S

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

龙腾12A,N渠道650V超级MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾10A,N渠道650V超级MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,4A超级MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,16A超级MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾N渠道650V,7A超级MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

650V MOS管--NCE65R900I,NCE65R900K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...