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5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM马达驱动。
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NCE65NF190V场效应管新洁能代理商
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...
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SVSP20N60TD2-场效应管
SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 N沟道增强型高压功率MOSFET采用士兰微电子超结MOS技术平台制造,具有很低的传导.损耗和开关损耗。使得功率转换器具有高效,高功率密度,提高热行为。此外,SVSP20N60FJD(K)(T)(PN)(S)(P7)D2应用广泛。如,适用于硬/软开...
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SVSP24N60FJD(T)D2场效应管
SVSP24N60FJD(T)D2 N沟道增强型高压功率MOSFET 采用士兰微电子超结MOS技术平台制造,具有很低的传导损耗和开关损耗。使得功率转换器具有高效,高功率密度,提高热行为.此外,SVSP24N60FJD(T)D2 应用广泛。如,适用于硬/软开关拓扑。
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士兰微38A, 600V 超结 MOS功率管-SVSP60R090P7(L)(FJD)(T)(S)HD4
SVSP60R090P7(L)(FJD)(T)(S)HD4 N沟道增强型高压功率MOSFET采用士兰微电子超结MOS技术制造,具有很低的传导损耗和开关损耗,使得功率转换器具有高效,高功率密度,提高热行为。此外,SVSP60R090P7(L)(FJD)(T)(S)HD4 应用广泛。如适用于硬/软开关拓扑。
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新洁能场效应管NCE65NF036T-TO-247封装MOS管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid reco...
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新洁能场效应管NCE65NF023T-TO-220F封装MOS管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...
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新洁能场效应管NCE65NF099F-MOS管TO-220F封装
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...
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新洁能MOS管NCE65NF130F场效应管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...
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新洁能场效应管650V-MOS管NCE65TF099D,NCE65TF099,NCE65TF099F
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...
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新洁能场效应管650V-MOS管NCE65TF130F
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junctio...
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MOS管 650V N沟道TO-220F MOSFET场效应管-NCE65T180F
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...
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N通道超级沟槽ii功率mosfet--NCEP058N85D
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...
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增强型功率mosN沟道--NCE4080K
The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
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N沟道增强型功率mosfet--NCE3010S
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
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龙腾12A,N渠道650V超级MOS管--LND12N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
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龙腾10A,N渠道650V超级MOS管--LND10N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...
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龙腾N渠道650V,4A超级MOS管--LND4N65
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
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