登录|注册收藏本站在线留言联系中铭网站地图 English

您好,欢迎访问中铭电子官方网站!

中铭电子 中铭电子

咨询电话:

400-788-7770
18923224605

热门关键词: led恒流驱动芯片 MOS管 led驱动 智能IGBT 华南华东IGBT IGBTIGBT 深圳IGBT IGBT公司 IGBT售后 IGBT代理

中铭功率器件
5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM马达驱动。
N通道高级功率mosfet--RU207C
N通道高级功率mosfet--RU207C
* 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free...
N通道超级沟槽ii功率mosfet--NCEP058N85D
N通道超级沟槽ii功率mosfet--NCEP058N85D
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...
增强型功率mosN沟道--NCE4080K
增强型功率mosN沟道--NCE4080K
The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
N沟道增强型功率mosfet--NCE3010S
N沟道增强型功率mosfet--NCE3010S
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
龙腾12A,N渠道650V超级MOS管--LND12N65
龙腾12A,N渠道650V超级MOS管--LND12N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
龙腾10A,N渠道650V超级MOS管--LND10N65
龙腾10A,N渠道650V超级MOS管--LND10N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,4A超级MOS管--LND4N65
龙腾N渠道650V,4A超级MOS管--LND4N65
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,16A超级MOS管--LND16N65
龙腾N渠道650V,16A超级MOS管--LND16N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
龙腾N渠道650V,7A超级MOS管--LND7N65D
龙腾N渠道650V,7A超级MOS管--LND7N65D
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
650V MOS管--NCE65R900I,NCE65R900K
650V MOS管--NCE65R900I,NCE65R900K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
MOS管650V--NCE65R1K2Z
MOS管650V--NCE65R1K2Z
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
NCE65R1K2I,NCE65R1K2K
NCE65R1K2I,NCE65R1K2K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
NCE65R2K4I,NCE65R2K4K
NCE65R2K4I,NCE65R2K4K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
NCE65R540I, NCE65R540K
NCE65R540I, NCE65R540K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
MOS管--NCE3407A
MOS管--NCE3407A
Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...
新洁能MOS管--NCE3407
新洁能MOS管--NCE3407
MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).
记录总数:78 | 页数:41234  
联系中铭
全国咨询热线:400-788-7770

销售电话:0769-81150556
工程电话:0769-85638990

传真:0769-83351643

邮箱:dgzm699@163.com

地址:东莞市矮岭冚村沿河东街8号