6A，700V DP MOS功率管--SVS6N70M/MJ/D

SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，650V DP MOS功率管--SVS6N65F

SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，600V DP MOS功率管--SVS6N60F/D/T/M/MJ

SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，650V DP MOS功率管--SVS4N65F/D/MJ

SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，600V DP MOS功率管--SVS4N60F/D/MJ

SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

47A，600V DP MOS功率管--SVS47N60PN

SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，650V DP MOS功率管--SVS11N65T/F

SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，600V DP MOS功率管--SVS11N60T/F

SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。使得功率转换器高功率密度，提高热行为。

SJT13005NT/D/F/M/N NPN型硅三极管

SJT13005NT/D/F/M NPN型硅三极管采用士兰微电子平面三极管工艺技术制造。 该系列产品主要应用在应用整流器等。

SJT13005N1MJ/NF/D NPN型硅三极管

SJT13005N1MJ/NF/D NPN型硅三极管采用士兰微电子平面三极管工艺技术制造。 该系列产品主要应用在电子整流器、节能灯、高频开关电源、高频功率转换、功率放大电路。 SJT13005N1MJ/NF/D NPN三极管目前可提供TO-251J-3L,TO-126-3L,TO-252-2L封装外形。

SJT13003NDB/N NPN型硅三极管

SJT3003NDB/N NPN 型硅三极管采用士兰微电子平面三极管工艺技术制造。 该系列产品主要应用在电子整流器等。 SJT13003NDB/N 三极管目前可提供TO-92-3L和TO-126-3L 封装外形。

SOP封装适用于4~8W输出功率的原边控制开关电源--SD6953

SD6953是驱动高压三极管的原边控制模式的开关电源控制器（PSR），内置线损补偿和峰值电流补偿功能，采用PFM调制技术，提供精确的恒压/恒流（CV/CC）控制环路，具有非常高的稳定性和平均效率。

用于苹果充电器肖特基整流管--SBD10L45T3

SBD10L45T3硅外延工艺制作而成的肖特基整流二极管，采用TO-277封装，广泛应用于开关电源、保护电路等各类电子线路中。

MOS管 NCE8580

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

MOS管 NCE7578

The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

MOS管 NCE6890

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE4060k

The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

MOS管 NCE0117

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE60P50

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...

MOS管 NCE65R540

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...