龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

650V 场效应MOS管--NCE65R900I,NCE65R900K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

场效应MOS管650V--NCE65R1K2Z新洁能代理商

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

650V新洁能MOS管--NCE65R1K2,NCE65R1K2D,NCE65R1K2F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE新洁能NCE65R1K2I,NCE65R1K2K场效应MOS管

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE新洁能650V MOS管--NCE65R2K4I,NCE65R2K4K场效应管

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

新洁能代理650V MOS管--NCE65R540I, NCE65R540K场效应管

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

新洁能授权代理商供应MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

中铭电子是新洁能授权代理供应MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

7A、800V N沟道增强型场效应管--SVF7N80T/F

SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。

7A，700V DP MOS功率管--SVS7N70M/MJ/F

SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

7A，650V DP MOS功率管--SVS7N65F/D

SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

7A，600V DP MOS功率管--SVS7N60D/F

SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，700V DP MOS功率管--SVS6N70M/MJ/D

SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，650V DP MOS功率管--SVS6N65F

SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，600V DP MOS功率管--SVS6N60F/D/T/M/MJ

SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，650V DP MOS功率管--SVS4N65F/D/MJ

SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，600V DP MOS功率管--SVS4N60F/D/MJ

SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。