N沟道增强型功率mosfet--NCE3010S
产品分类： mos管
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
订购热线：400-788-7770
- 增强型功率mosN沟道--NCE4080K
- The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- N通道超级沟槽ii功率mosfet--NCEP058N85D
- The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
- 网格状高压力高功率MOSFET--PN7308
- The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
N沟道增强型功率mosfet--NCE3010S
一 概述
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
二 特性
● VDS=30V,ID=10A
RDS(ON)<12mΩ @VGS=10V
RDS(ON)<16mΩ @VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
三 应用
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
四 封装
五 应用电路图
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- 增强型功率mosN沟道--NCE4080K
- The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- N通道超级沟槽ii功率mosfet--NCEP058N85D
- The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
- 网格状高压力高功率MOSFET--PN7308
- The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
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全国咨询热线：400-788-7770
销售电话：0769-81150556
工程电话：0769-85638990
传真：0769-83351643
地址：东莞市矮岭冚村沿河东街8号
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