N通道超级沟槽ii功率mosfet--NCEP058N85D|mos管|中铭电子全国咨询热线:400-788-7770

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N通道超级沟槽ii功率mosfet--NCEP058N85D

产品分类： mos管

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

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跟此产品相关的产品

: N沟道增强型功率mosfet--NCE3010S; The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

: 增强型功率mosN沟道--NCE4080K; The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

: 高电压,高功率驱动MOSFET--PN7104; The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.

产品详情

N通道超级沟槽ii功率mosfet--NCEP058N85D

一概述

二特性

● VDS=85V,ID=95A

RDS(ON)=5.4mΩ,typical(TO-220)@VGS=10V RDS(ON)=5.2mΩ, typical(TO-263)@VGS=10V

● Excellent gate chargexRDS(on) product(FOM)

● Very low on-resistance RDS(on)

● 175°C operating temperature

● Pb-free lead plating

三应用

● DC/DC Converter

● Ideal for high-frequency switching and synchronous rectification

四封装

五应用电路图

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跟此产品相关的产品

: N沟道增强型功率mosfet--NCE3010S; The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

: 增强型功率mosN沟道--NCE4080K; The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

: 高电压,高功率驱动MOSFET--PN7104; The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.