-
-
5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM马达驱动。
-
-
650V MOS管--NCE65R900I,NCE65R900K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
-
-
新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
-
-
MOS管650V--NCE65R1K2Z
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
-
-
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
-
-
NCE65R1K2I,NCE65R1K2K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
-
-
NCE65R2K4I,NCE65R2K4K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
-
-
NCE65R540I, NCE65R540K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
-
-
7A,700V DP MOS功率管--SVS7N70M/MJ/F
SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
7A,650V DP MOS功率管--SVS7N65F/D
SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
7A,600V DP MOS功率管--SVS7N60D/F
SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
6A,700V DP MOS功率管--SVS6N70M/MJ/D
SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
6A,650V DP MOS功率管--SVS6N65F
SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
4A,650V DP MOS功率管--SVS4N65F/D/MJ
SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
4A,600V DP MOS功率管--SVS4N60F/D/MJ
SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
47A,600V DP MOS功率管--SVS47N60PN
SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
11A,650V DP MOS功率管--SVS11N65T/F
SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
-
-
11A,600V DP MOS功率管--SVS11N60T/F
SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。使得功率转换器高功率密度,提高热行为。
推荐产品
推荐资讯
- 2017-05-08 电源适配器的主要质量指标有哪些?
- 2015-11-24 电源芯片厂要做好消防安全
- 2017-10-27 开关驱动芯片的工作原理
- 2017-03-06 用于暖气机电源芯片,还你一个温暖的春天
- 2014-03-14 电感式气压传感器的基本原理
- 2015-02-17 光大LED电源IC简介
- 2016-01-26 待机功耗高的效率交直流转换芯片PN8124F
- 2016-01-08 一个好的智能家电离不开开关电源芯片的使用
- 2014-03-14 中铭客户-欧陆通
- 2015-12-03 开关电源芯片信息汇总
- 2016-01-11 高质量的开关电源芯片对用电很有保障
- 2015-12-14 小家电驱动芯片员工的一天
- 2018-03-27 集成USB TYPEC/PD2.0/PD3.0 协议用于USB TYPEC 输入端口的快充协议IC--IP2721
- 2015-11-07 电源芯片厂家需要提升自身竞争力,在多变的市场中站稳脚跟
- 2014-07-14 LED驱动IC厂商的又一新技术
- 2014-08-19 红外感应芯片的那点事--红外线感应水龙头
- 2014-08-06 奥迪—恒流LED驱动ic厂家为你细说
- 2014-11-22 家电控制板设计——双十一家电线上线下冰火两重天
- 2015-12-17 小家电驱动芯片员工时刻为实现努力着
- 2015-10-26 电源管理芯片推荐
销售电话:0769-81150556
工程电话:0769-85638990
传真:0769-83351643
地址:东莞市矮岭冚村沿河东街8号