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5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM马达驱动。
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650V MOS管--NCE65R900I,NCE65R900K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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MOS管650V--NCE65R1K2Z
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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NCE65R1K2,NCE65R1K2D,NCE65R1K2F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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NCE65R1K2I,NCE65R1K2K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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NCE65R2K4I,NCE65R2K4K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
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NCE65R540I, NCE65R540K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
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7A,700V DP MOS功率管--SVS7N70M/MJ/F
SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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7A,650V DP MOS功率管--SVS7N65F/D
SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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7A,600V DP MOS功率管--SVS7N60D/F
SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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6A,700V DP MOS功率管--SVS6N70M/MJ/D
SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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6A,650V DP MOS功率管--SVS6N65F
SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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4A,650V DP MOS功率管--SVS4N65F/D/MJ
SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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4A,600V DP MOS功率管--SVS4N60F/D/MJ
SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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47A,600V DP MOS功率管--SVS47N60PN
SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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11A,650V DP MOS功率管--SVS11N65T/F
SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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11A,600V DP MOS功率管--SVS11N60T/F
SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。使得功率转换器高功率密度,提高热行为。
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