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中铭电子解决方案
5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM...
650V MOS管--NCE65R900I,NCE65R900K
650V MOS管--NCE65R900I,NCE65R900K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
MOS管650V--NCE65R1K2Z
MOS管650V--NCE65R1K2Z
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
NCE65R1K2I,NCE65R1K2K
NCE65R1K2I,NCE65R1K2K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
NCE65R2K4I,NCE65R2K4K
NCE65R2K4I,NCE65R2K4K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
NCE65R540I, NCE65R540K
NCE65R540I, NCE65R540K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
7A,700V DP MOS功率管--SVS7N70M/MJ/F
7A,700V DP MOS功率管--SVS7N70M/MJ/F
SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
7A,650V DP MOS功率管--SVS7N65F/D
7A,650V DP MOS功率管--SVS7N65F/D
SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
7A,600V DP MOS功率管--SVS7N60D/F
7A,600V DP MOS功率管--SVS7N60D/F
SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
6A,700V DP MOS功率管--SVS6N70M/MJ/D
6A,700V DP MOS功率管--SVS6N70M/MJ/D
SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
6A,650V DP MOS功率管--SVS6N65F
6A,650V DP MOS功率管--SVS6N65F
SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
4A,650V DP MOS功率管--SVS4N65F/D/MJ
4A,650V DP MOS功率管--SVS4N65F/D/MJ
SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
4A,600V DP MOS功率管--SVS4N60F/D/MJ
4A,600V DP MOS功率管--SVS4N60F/D/MJ
SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
47A,600V DP MOS功率管--SVS47N60PN
47A,600V DP MOS功率管--SVS47N60PN
SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
11A,650V DP MOS功率管--SVS11N65T/F
11A,650V DP MOS功率管--SVS11N65T/F
SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
11A,600V DP MOS功率管--SVS11N60T/F
11A,600V DP MOS功率管--SVS11N60T/F
SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。使得功率转换器具有高效,高功率密度,提高热行为。
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