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热门关键词: led恒流驱动芯片 MOS管 led驱动 智能IGBT 华南华东IGBT IGBTIGBT 深圳IGBT IGBT公司 IGBT售后 IGBT代理

MOS管 NCE8580
MOS管 NCE8580
The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...
MOS管 NCE7578
MOS管 NCE7578
The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...
MOS管 NCE6890
MOS管 NCE6890
The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
MOS管 NCE4060k
MOS管 NCE4060k
The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
MOS管 NCE0117
MOS管 NCE0117
The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
MOS管 NCE60P50
MOS管 NCE60P50
The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...
MOS管 NCE65R540
MOS管 NCE65R540
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...
MOS管 NCE01P13
MOS管 NCE01P13
The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
POWER MOSFET--10N60K
POWER MOSFET--10N60K
The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...
POWER MOSFET--8N60
POWER MOSFET--8N60
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low o...
POWER MOSFET--5N60
POWER MOSFET--5N60
The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resi...
POWER MOSFET-- 4N60-C
POWER MOSFET-- 4N60-C
The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re...
POWER MOSFET--2N70
POWER MOSFET--2N70
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and hi...
POWER MOSFET--2N60
POWER MOSFET--2N60
The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res...
POWER MOSFET--1N60
POWER MOSFET--1N60
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance...
MOSFET场效应晶体管-SVF12N60
MOSFET场效应晶体管-SVF12N60
SVF12N60T/F/SN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,H桥PWM马达驱动。
MOSFET场效应晶体管-SVF10N60
MOSFET场效应晶体管-SVF10N60
SVF10N60T/F/FG/S/KN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,H桥PWM马达驱动。
MOSFET场效应晶体管-SVF8N60
MOSFET场效应晶体管-SVF8N60
SVF8N60T/FN沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM 马达驱动。
MOSFET场效应晶体管-SVF7N60
MOSFET场效应晶体管-SVF7N60
SVF7N60T/F/S/K/MJ N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,H桥PWM马达驱动。
MOSFET场效应晶体管-SVF4N60
MOSFET场效应晶体管-SVF4N60
SVF4N60D/F/FG/T/K/M/MJN沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM...
记录总数:42 | 页数:3  123  
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