SDC2256是一款高精度降压型LED恒流驱动芯片。芯片内部集成 500V 功率管，工作电流很低，无需变压器辅助绕组检测和供电，极大的节约了系统成本和体积。[查看]

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SDC2258是一款高精度降压型LED恒流驱动芯片。芯片内部集成 500V 功率管，工作电流很低，无需变压器辅助绕组检测和供电，极大的节约了系统成本和体积。[查看]

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AP2005 是电流模式 DC-DC 升压转换器。它是内置 0.05欧姆功率 MOSFET的 PWM电路使转换器效率高。内部补偿电路也减少多达 6 个外部器件。误差放大器的同相输入端连接到一个精准的 0.6V基准电压。内部软启动功能，可降低浪涌电流。 AP2005 适应于 SOP8-PP 封装，为应用领域节省PCB空间。[查看]

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AP2953A是一款单片同步整流降压稳压器，它集成了导通阻抗100m?的MOSFET，可以在很宽的输入电压范围（4.75V-18V）内提供3A的负载能力。电流模式控制使其具有的瞬态响应和单周期内的限流功能。 可调的软启动时间能避免开启瞬间的冲击电流，在停机 模式下，输入电流小于1uA。 AP2953A封装为SOP8-PP, 同时提供了紧凑的系统方案，可以限度的减少外围元件。[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry!ˉs AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications.[查看]

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The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested[查看]

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The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power TO-251TO-220F2supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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