The PN7336 is a high voltage, high speed power MOSFET and IGBT drivers with a three independent high and low sidereferenced output channels for 3-phase applications. The floating channels can be used to drive N-channel power MOSFETs　or IGBTs in the high side configuration which operates up to 600V. Logic inputs are compatible with CMOS or LSTTL outputs,down to 3.3V logic.[查看]

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The PN7101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver c[查看]

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The PN7103 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.[查看]

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The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.[查看]

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The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.[查看]

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The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration (versionB) or any other high-side& low-side configuration (version A) which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.[查看]

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The PN7136 is a high voltage, high speed power MOSFET and IGBT drivers with a three independent high and low side referenced output channels for 3-phase applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600V. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. outputs, down to 3.3V l[查看]

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The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.[查看]

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The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.[查看]

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The PN7008 is a high voltage, high speed power MOSFET and IGBT driver. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction.[查看]

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The PN7006 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 120 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver .[查看]

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PN7003是一款可以提供大电流输出、方便易用的智能化IGBT驱动，该芯片集成了欠压锁定、过压锁定、IGBT导通时间 控制、IGBT SOA保护以及故障后“软关断”等功能，保障IGBT工作。并且PN7003可与MCU进行故障通信，将故障信号反 馈给MCU，同时接收MCU唤醒或重置信号。[查看]

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PN7103是一款基于P衬底、P外延的高压、高速功率MOSFET和IGBT驱动芯片，其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT组成半桥结构，该芯片逻辑输入电平兼容3.3V的CMOS或LSTTL逻辑输出电平。输出具有大电流脉冲能力，传输延时具有匹配性，以简化在高频下的应用。[查看]

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PN7136是一款具有三相独立输出的高压、高速功率MOSFET和IGBT高低侧驱动芯片，其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT结构。该芯片逻辑输入电平兼容3.3V的CMOS或LSTTL逻辑输出电平。该芯片可以通过外部电流感应电阻传送信号对六个输出进行关断，实现过流保护功能。使能端可以同时关断六个输出通道。FAULT端信号用于提示过流或者欠压情况的发生，过流信号的自动清除时间可以通过外部可编程的RC延时网络提供。输出具有大电流脉冲能力。传输延时具有匹配性，以简化在高频下的应用。[查看]

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SGT15T120LR1P7绝缘栅双极型晶体管采用新一代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于感应加热UPS，SMPS以及PFC等领域。[查看]

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SGT20N120NPTFDP7绝缘栅双极型晶体管采用新一代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于感应加热UPS，SMPS以及PFC等领域。[查看]

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