NCE65R1K2,NCE65R1K2D,NCE65R1K2F|cool mos管|中铭电子全国咨询热线:18929103949

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NCE65R1K2,NCE65R1K2D,NCE65R1K2F

产品分类： cool mos管

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

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跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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650V MOS管--NCE65R1K2,NCE65R1K2D,NCE65R1K2F

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跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.