登录|注册收藏本站在线留言联系中铭网站地图

您好,欢迎访问中铭电子官方网站!

中铭电子中铭电子

免费咨询热线:

18929103949

热门关键词:华南华东IGBT深圳工业智能IGBT公司华南华东IGBT深圳工业智能IGBT代理华南华东IGBT工业深圳智能IGBT售后华南华东IGBT深圳工业智能IGBT售后华南华东IGBT工业深圳智能IGBT公司IGBT深圳工业智能IGBT价格IGBT工业深圳智能IGBT价格华南华东IGBT工业深圳智能IGBT代理

650V MOS管--NCE65R900I,NCE65R900K

产品分类: cool mos管
    The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
    订购热线:18929103949
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

            650V MOS管--NCE65R900I,NCE65R900K

        全国咨询热线:18929103949 唐小姐

        销售部电话:0769-81150556   

        工程部电话:0769-85638990

        QQ:1923681612   

        邮箱:dgzm699@163.com      

       

        总部地址:东莞市大岭山镇矮岭冚村沿河东街8号

        佛山办事处:佛山市顺德区容桂镇细滘德宝北路合安街19号

       

        中铭官网:www.zm699.com      

      * 表示必填采购:650V MOS管--NCE65R900I,NCE65R900K
      * 联系人: 请填写您的真实姓名
      公司名称: 请填写您的公司名称
      联系电话:
      * 手机号码: 请填写您的联系电话
      电子邮件:
      联系地址:
      * 采购意向描述:
      请填写采购的产品数量和产品描述,方便我们进行统一备货。
      验证码: 验证码
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

      相关资讯

      我要评论:  
      内 容:
      (内容最多500个汉字,1000个字符)
      验证码: 看不清?!
       
      联系中铭
      全国咨询热线:18929103949

      销售电话:0769-81150556
      工程电话:0769-85638990

      传真:0769-83351643

      邮箱:dgzm699@163.com

      地址:东莞市矮岭冚村沿河东街8号