The NCE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested[查看]

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The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.[查看]

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SVF2N60M/MJ/N/F/T/DN 沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。[查看]

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SVF4N60D/F/FG/T/K/M/MJN沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。[查看]

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SVF7N60T/F/S/K/MJ N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。[查看]

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SVF8N60T/FN沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM 马达驱动。[查看]

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SVF10N60T/F/FG/S/KN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。[查看]

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SVF12N60T/F/SN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。[查看]

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SVF1N60AM/MJ/B/D/F/HN 沟道增强型高压功率MO场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压 H桥PWM马达驱动。[查看]

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