登录|注册收藏本站在线留言联系中铭网站地图

您好,欢迎访问中铭电子官方网站!

中铭电子中铭电子

咨询电话:

400-788-7770
18923224605

热门关键词:华南华东IGBT深圳工业智能IGBT公司华南华东IGBT深圳工业智能IGBT代理华南华东IGBT工业深圳智能IGBT售后华南华东IGBT深圳工业智能IGBT售后华南华东IGBT工业深圳智能IGBT公司IGBT深圳工业智能IGBT价格IGBT工业深圳智能IGBT价格华南华东IGBT工业深圳智能IGBT代理

MOS管 NCE8580

产品分类: mos管
    The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
    订购热线:400-788-7770
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

      NCE N-Channel Enhancement Mode Power MOSFET

       

      ModleNCE8580

       

       

       

      一、Description

       

      The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

       

       

      二、General Features

       

      l  VDS =85V,ID=80A

      RDS(ON)< 8.5m @ V =10V  (Typ:6.8m)

       

      l  High density cell design for ultra low Rdson 

      l  Fully characterized avalanche voltage and current 

      l  Good stability and uniformity with high EAS

      l  Excellent package for good heat dissipation

      l  Special process technology for high ESD capability 

      l  Special designed for convertors and power controls

       

       

      三、Application

       

      l  Power switching application

      l  Hard switched and High frequency circuits 

      l  Uninterruptible power supply

       

      四、Package Marking And Ordering Information

       

      NCE8580 封装和订购信息 

       

       

      五、Absolute Maximum Ratings (T =25unless otherwise noted)

       

      NCE8580 封装和订购信息

       

       

        全国咨询热线:400-788-7770

        销售部电话:0769-81150556   手机:18929103949  唐经理

        工程部电话:0769-85638990   手机:18923224605  叶小姐

        邮箱:dgzm699@163.com  QQ:1923681612   传真:0769-83351643

       

        总部地址:东莞市大岭山镇矮岭冚村沿河东街8号

        佛山办事处:佛山市顺德区容桂镇细滘德宝北路合安街19号

       

        中铭官网:www.zm699.com      

      * 表示必填采购:MOS管 NCE8580
      * 联系人: 请填写您的真实姓名
      公司名称: 请填写您的公司名称
      联系电话:
      * 手机号码: 请填写您的联系电话
      电子邮件:
      联系地址:
      * 采购意向描述:
      请填写采购的产品数量和产品描述,方便我们进行统一备货。
      验证码: 验证码
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

      相关资讯

      我要评论:  
      内 容:
      (内容最多500个汉字,1000个字符)
      验证码: 看不清?!
       
      联系中铭
      全国咨询热线:400-788-7770

      销售电话:0769-81150556
      工程电话:0769-85638990

      传真:0769-83351643

      邮箱:dgzm699@163.com

      地址:东莞市矮岭冚村沿河东街8号