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MOS管 NCE8580

产品分类: mos管
    The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
    订购热线:400-788-7770
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

      NCE N-Channel Enhancement Mode Power MOSFET

       

      ModleNCE8580

       

       

       

      一、Description

       

      The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

       

       

      二、General Features

       

      l  VDS =85V,ID=80A

      RDS(ON)< 8.5m @ V =10V  (Typ:6.8m)

       

      l  High density cell design for ultra low Rdson 

      l  Fully characterized avalanche voltage and current 

      l  Good stability and uniformity with high EAS

      l  Excellent package for good heat dissipation

      l  Special process technology for high ESD capability 

      l  Special designed for convertors and power controls

       

       

      三、Application

       

      l  Power switching application

      l  Hard switched and High frequency circuits 

      l  Uninterruptible power supply

       

      四、Package Marking And Ordering Information

       

      NCE8580 封装和订购信息 

       

       

      五、Absolute Maximum Ratings (T =25unless otherwise noted)

       

      NCE8580 封装和订购信息

       

       

        全国咨询热线:400-788-7770

        销售部电话:0769-81150556   

        工程部电话:0769-85638990   手机:18923224605  叶小姐

        邮箱:dgzm699@163.com  QQ:1923681612   传真:0769-83351643

       

        总部地址:东莞市大岭山镇矮岭冚村沿河东街8号

        佛山办事处:佛山市顺德区容桂镇细滘德宝北路合安街19号

       

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      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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      全国咨询热线:400-788-7770

      销售电话:0769-81150556
      工程电话:0769-85638990

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      邮箱:dgzm699@163.com

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