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MOS管 NCE4060k

产品分类: mos管
    The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    订购热线:400-788-7770
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

       

      NCE N-Channel Enhancement Mode Power MOSFET

       

      ModleNCE4060K

       

       

      一、Description

      The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

       

      二、General Features

      l  VDS =80V,ID=105A

      RDS(ON)< 6.5m @ V =10V 

      l  High density cell design for ultra low Rdson 

      l  Fully characterized avalanche voltage and current 

      l  Good stability and uniformity with high EAS

      l  Excellent package for good heat dissipation

      l  Special process technology for high ESD capability 

       

      三、Application

       

      l  Loadswitching

      l  Hard switched and high frequency circuits 

      l  Uninterruptible power supply

       

      四、Package Marking And Ordering Information

       

      NCE4060K 封装和订购信息 

       

      五、Absolute Maximum Ratings (T =25unless otherwise noted)

       

      NCE4060K 最大参数

       

           

        全国咨询热线:400-788-7770

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        邮箱:dgzm699@163.com  QQ:1923681612   传真:0769-83351643

       

        总部地址:东莞市大岭山镇矮岭冚村沿河东街8号

        佛山办事处:佛山市顺德区容桂镇细滘德宝北路合安街19号

       

        中铭官网:www.zm699.com      

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      验证码: 验证码
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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      地址:东莞市矮岭冚村沿河东街8号