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国硅集成NSG27511单通道高速低侧栅极驱动芯片
NSG27511单通道高速低侧栅极驱动器器件可有效驱动金属氧化物半导体场效应管(MOSFET)和绝缘栅极双极型晶体管(IGBT)电源开关。NSG27511采用的设计方案可最大程度减少击穿电流,从而为电容负载提供较高的峰值拉/灌电流脉冲,同时提供到轨驱动能力以及超短的传播延迟。[查看]
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士兰微代理商305A、100V N沟道增强型场效应管-SVGP101R8NP7-2HS
SVGP101R8NP7-2HS N沟道增强型功率MOS场效应晶体管采用士兰的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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士兰微代理商120A、80V N沟道增强型场效应管-SVG083R4NT(S)(P7)
SVG083R4NT(S)(P7) N沟道增强型功率MOS场效应晶体管采用士兰的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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士兰微代理商240A、150V N沟道增强型场效应管-SVGP153R8NP7
SVGP153R8NP7 N 沟道增强型功率MOS场效应晶体管采用士兰的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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士兰微代理180A、100V N沟道增强型场效应管SVGP103R0NT(P7)
SVGP103R0NT(P7) N 沟道增强型功率 MOS 场效应晶体管采用 士兰的 LVMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有 较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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120A、30V N沟道增强型场效应管-SVT034R6ND(T)
SVT034R6ND(T) N 沟道增强型功率MOS场效应晶体管采用士兰的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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100A、30V N沟道增强型场效应管-SVT035R5ND
SVT035R5ND(MJ)(T) N沟道增强型功率MOS场效应晶体管采用士兰的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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60A、30V N沟道增强型场效应管-SVT03100NDN
SVT03100NDN沟道增强型功率MOS场效应晶体管采用士兰的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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80A、60V N沟道增强型场效应管-SVT068R5NT/D/S/L5
SVT068R5NT/D/S/L5 N沟道增强型功率MOS场效应晶体管采用先进的LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统电源管理。[查看]
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14A、100V N沟道增强型场效应管-SVT10111ND
SVT10111ND N 沟道增强型功率MOS场效应晶体管采用士兰LVMOS工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。[查看]
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NCE65NF190V场效应管新洁能代理商
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]
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SVSP24N60FJD(T)D2场效应管
SVSP24N60FJD(T)D2 N沟道增强型高压功率MOSFET 采用士兰微电子超结MOS技术平台制造,具有很低的传导损耗和开关损耗。使得功率转换器具有高效,高功率密度,提高热行为.此外,SVSP24N60FJD(T)D2 应用广泛。如,适用于硬/软开关拓扑。[查看]
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SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 场效应管
[查看]
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SVSP20N60TD2-场效应管
SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 N沟道增强型高压功率MOSFET采用士兰微电子超结MOS技术平台制造,具有很低的传导.损耗和开关损耗。使得功率转换器具有高效,高功率密度,提高热行为。此外,SVSP20N60FJD(K)(T)(PN)(S)(P7)D2应用广泛。如,适用于硬/软开关拓扑。[查看]
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新洁能场效应管NCE65NF099F-MOS管TO-220F封装
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]
http://www.zm699.com/Products/xjncxy0gnce.html3星
新洁能MOS管NCE65NF130F场效应管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc[查看]
http://www.zm699.com/Products/xjnmo3sgnce.html3星
新洁能场效应管650V-MOS管NCE65TF099D,NCE65TF099,NCE65TF099F
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]
http://www.zm699.com/Products/xjncxy677g650.html3星
新洁能场效应管650V-MOS管NCE65TF130F
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://www.zm699.com/Products/xjncxyg650.html3星
MOS管  650V N沟道TO-220F MOSFET场效应管-NCE65T180F
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]
http://www.zm699.com/Products/mosg650vng.html3星
新洁能场效应管NCE65NF068T-TO-247封装MOS管
[查看]
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记录总数:38 | 页数:212